2SD1766R Просмотр технического описания (PDF) - Willas Electronic Corp.
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2SD1766R Datasheet PDF : 3 Pages
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WILLAS
FM120-M+
2SD1766 THRU
SOT1-.08A9SUPRlFaAsCtEicMO-EUNnTcSaCHpOsTuTKlaY tBeARTRrIEaRnRsEiCsTtIFoIErRsS -20V- 200V
FM1200-M
Typical CharacSOteDr-i1s23ti+csPACKAGE
Features Static Characteristic
700
1000
• BCaOtcMhMOpNrocess design, excellent power dissipation offers
Package outline
hFE —— IC
beEtMtIeTTrErReverse leakage current and thermal resistance.
600
•
L
T =25℃
oaw pro
f
i
l
e
surface
mounted
applicatio2n.0minA order
to
T =100℃
a
SOD-123H
Pb Free Produc
optimize board space.
500
1.8mA
• Low power loss, high efficiency.
1.6mA
•400 H i g h
current
capability,
low
forward
voltage
1.4mA
drop.
• High surge capability.
1.2mA
100
•300Guardring for overvoltage protection. 1.0mA
• Ultra high-speed switching.
0.8mA
•200Silicon epitaxial planar chip, metal silic0o.6nmAjunction.
T =25℃
a
0.146(3.7)
0.130(3.3)
0.012(0.3) Typ.
0.071(1.8)
0.056(1.4)
• Lead-free parts meet environmental st0a.4nmdAards of
100
MIL-STD-19500 /228
I =0.2mA
• RoHS product for packing code suffix "G" B
0
10
H0 alogen fr1ee produc2t for packin3 g code su4ffix "H" 5
1
COLLECTOR-EMITTER VOLTAGE V (V)
Mechanical data
CE
COMMON EMITTER
V = 3V
CE
10
100
COLLECTOR CURRENT I (mA)
C
1000 2000
• Epoxy
1000
:
UL94-VV0BErsaatte—d —flameIC
retardant
VCEsat ——
IC
0.040(1.0)
0.024(0.6)
300
• Caβ=s1e0 : Molded plastic, SOD-123H
β=10
,
•800Terminals :Plated terminals, solderable per MIL-STD-750
Method 2T02=265℃
100
a
0.031(0.8) Typ.
T =100 ℃
a
0.031(0.8) Typ.
•
600
P
o
l
a
r
it
y
:
Indicated
by
cathode
band
Dimensions in inches and (millimeters)
• Mounting Position : Any
T =100 ℃
•400 We i g h t
:
Approximated
a
0.011
gram
10
T =25℃
a
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
200
Ratings at 25℃ ambient temperature unless otherwise specified.
Single phase half wave, 60Hz, resistive of inductive load.
For capa00c.1itive load, d1erate curre1n0 t by 20% 100
1000 2000
1
0.1
1
10
100
1000 2000
COLLECTOR CURREMT I (mA)
RATINGS
C
COLLECTOR CURREMT I (mA)
SYMBOL
FM120-MH
FM130-MH
FM140-MH
FM150-MH
C
FM160-MH
FM180-MH
FM1100-MH
FM1150-MH FM1200-MH
Marking Code
VBE —— IC
Maximu12m000000RecuCrOreMnMtOPNeEaMkITRTEeRverse Voltage
Maximum RMSVCVE=o3lVtage
Maximum DC Blocking Voltage
100
Maximum Average Forward Rectified Current
VRRM
12
13
20
100300
14
40
15 fT ——16 IC
18
50
60
80
COMMON EMITTER
10
100
115 120
150
200
VRMS
14
21 VCE=5V28
35
42
T =25℃
VDC
20
30 a 40
50
60
56
70
105
140
80
100
150
200
IO
1.0
Peak Forward Surge Current 8.3 ms single half sine-wave
10
IFSM
100
30
superimposed on rated load (JEDEC method)
Typical Thermal Resistance (Note 2)
Typical Ju1nction Capacitance (Note 1)
Operating Temperature Range
Storage Temperature Range
RΘJA
CJ
TJ
TSTG
-55 to +125
40
120
- 65 to +175
-55 to +150
0.1
0.0
0.3
0.6
0.9
CHABRASAEC-ETMEMRITIESRTVIOCLSTAGE
V (V)
BE
Maximum Forward Voltage at 1.0A DC
Maximu10m00 Average ReversCe oCb/uCribren—t a—t @VTCBA/=V2EB5℃
Rated DC Blocking Voltage
@T A=125℃
C
NOTES:
ib
10
1.2
5
10
40
100
SYMBOL FM120-MH FM130-MH FM140-MHCOFLML1E5C0T-OMRHCFUMRR16E0N-TMHICFM(m18A0) -MH FM1100-MH FM1150-MH FM1200-MH
VF
IR
f=1MHz
I =0/I =0
E
C
T =25 ℃
a
0.50
600
0.70
PC —— 0T.a5
10
0.85
0.9
0.92
1- Measu1r0e0d at 1 MHZ and applied reverse voltage of 4.0 VDC.
400
2- Thermal Resistance From JunctionCto Ambient
ob
10
200
201210.-106
2012-0
1
10
30
REVERSE VOLTAGE V (V)
0
0
25
50
75 W100ILLA1S25 ELE150CTRONIC COR
AMBIENT TEMPERATURE T (℃)
a
WILLAS ELECTRONIC CORP.
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