2SC5703(2006) Просмотр технического описания (PDF) - Toshiba

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производитель

2SC5703
(Rev.:2006)

TOSHIBA Transistor Silicon NPN Epitaxial Type

Toshiba 

2SC5703

rth – tw

1000

100

10

1

0.001

0.01

Curves should be applied in thermal limited area.

Single nonrepetitive pulse Ta = 25°C

Mounted on an FR4 board (glass epoxy, 1.6 mm thick, Cu

area: 645 mm2)

0.1

1

10

100

1000

Pulse width tw (s)

Safe Operating Area

10 IC max (pulsed) ♦ 10 ms♦ 1 ms♦ 100 μs♦ 10 μs♦

IC max (continuous)

100 ms♦*

1

10 s♦*

DC operation*

(Ta = 25°C)

♦: Single nonrepetitive pulse

0.1

Ta = 25°C

Note that the curves

for

100

ms*,

10 s* and DC operation* will be

different when the devices aren’t

mounted on an FR4 board (glass

epoxy, 1.6 mm thick, Cu area:

645 mm2). These characteristic

curves must be derated linearly

0.01 with increase in temperature.

0.1

1

10

100

Collector-emitter voltage VCE (V)

4

2006-11-10

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