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2SC5358 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
Номер в каталоге
Компоненты Описание
производитель
2SC5358
Silicon NPN Power Transistors
Quanzhou Jinmei Electronic
2SC5358 Datasheet PDF : 3 Pages
1
2
3
Product Specification
Silicon NPN Power Transistors
CHARACTERISTICS
Tj=25
℃
unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V
CEO
Collector-emitter breakdown voltage I
C
=50mA; I
B
=0
V
CEsat
Collector-emitter saturation voltage I
C
=8 A;I
B
=0.8A
V
BE
Base-emitter voltage
I
C
=7A ; V
CE
=5V
I
CBO
Collector cut-off current
V
CB
=230V I
E
=0
I
EBO
Emitter cut-off current
V
EB
=5V; I
C
=0
h
FE-1
DC current gain
I
C
=1A ; V
CE
=5V
h
FE-2
DC current gain
I
C
=7A ; V
CE
=5V
f
T
Transition frequency
I
C
=1A ; V
CE
=5V
C
OB
Output capacitance
I
E
=0; V
CB
=10V;f=1MHz
h
FE-1
classifications
R
O
55-110
90-180
www.jmnic.com
2SC5358
MIN TYP. MAX UNIT
230
V
3.0
V
1.5
V
5
μ
A
5
μ
A
55
180
35
30
MHz
200
pF
JMnic
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