2SC535 Просмотр технического описания (PDF) - Renesas Electronics
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2SC535 Datasheet PDF : 8 Pages
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2SC535
Electrical Characteristics
Item
Symbol Min Typ Max
Collector to base breakdown voltage
V(BR)CBO
30
—
—
Collector to emitter breakdown voltage V(BR)CEO
20
—
—
Emitter to base breakdown voltage
V(BR)EBO
4
—
—
Collector cutoff current
DC current transfer ratio
ICBO
—
—
0.5
hFE*1
60
—
200
Base to emitter voltage
VBE
—
0.72
—
Collector to emitter saturation voltage
VCE(sat)
—
0.17
—
Gain bandwidth product
fT
450 940
—
Collector output capacitance
Cob
—
0.9
1.2
Power gain
PG
17
20
—
Noise figure
NF
—
3.5
5.5
Input admittance (typ)
yie
1.3 + j5.3
Reverse transfer admittance (typ)
yre
Forward transfer admittance (typ)
yfe
Output admittance (typ)
yoe
Note: 1. The 2SC535 is grouped by hFE as follows.
B
C
60 to 120 100 to 200
–0.078 – j0.41
32 – j10
0.08 + j0.82
Unit
V
V
V
µA
V
V
MHz
pF
dB
dB
mS
mS
mS
mS
(Ta = 25°C)
Test conditions
IC = 10 µA, IE = 0
IC = 1 mA, RBE = ∞
IE = 10 µA, IC = 0
VCB = 10 V, IE = 0
VCE = 6 V, IC = 1 mA
VCE = 6 V, IC = 1 mA
IC = 20 mA, IB =4 mA
VCE = 6 V, IC = 5 mA
VCB = 10 V, IE = 0, f = 1 MHz
VCE = 6 V, IC = 1 mA,
f = 100 MHz
VCE = 6 V, IC = 1 mA,
f = 100 MHz, Rg = 50 Ω
VCE = 6 V, IC = 1 mA,
f = 100 MHz
Rev.2.00 Aug 10, 2005 page 2 of 7
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