2SC5239 Просмотр технического описания (PDF) - Inchange Semiconductor

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производитель

2SC5239

Silicon NPN Power Transistors

Inchange Semiconductor 

Inchange Semiconductor

Silicon NPN Power Transistors

Product Specification

2SC5239

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=10mA ;IB=0

VCEsat Collector-emitter saturation voltage IC=1A ;IB=0.2A

VBEsat Base-emitter saturation voltage

IC=1A ;IB=0.2A

ICBO

Collector cut-off current

VCB=800V ;IE=0

IEBO

Emitter cut-off current

VEB=7V; IC=0

hFE

DC current gain

fT

Transition frequency

Cob

Collector output capacitance

Switching times

IC=1A ; VCE=4V

IE=-0.25A ; VCE=12V

f=1MHz ; VCB=10V

ton

Turn-on time

ts

Storage time

tf

Fall time

IC=1A; IB1=0.15A ;IB2=-0.45A

VCC=250V; RL=250Ω

MIN TYP. MAX UNIT

550

V

0.5

V

1.2

V

100 μA

100 μA

10

30

6

MHz

35

pF

0.7 μs

4.0 μs

0.5 μs

2

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