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2SC4617G-Q-AL3-R Просмотр технического описания (PDF) - Unisonic Technologies

Номер в каталоге
Компоненты Описание
производитель
2SC4617G-Q-AL3-R
UTC
Unisonic Technologies UTC
2SC4617G-Q-AL3-R Datasheet PDF : 5 Pages
1 2 3 4 5
2SC4617
„ TYPICAL CHARACTERISTICS
NPN SILICON TRANSISTOR
Gain Bandwidth Product vs. Emitter
Current
Ta = 25
500 VCE =6V
200
100
50
-0.5 -1 -2
-5 -10 -20 -50 -100
Collector Current, IE (mA)
Collector Output Capacitance vs. Collector-Base Voltage
Emitter Input Capacitance vs. Emitter-Base Voltage
20
10
Cib
Ta=25
f=1MHz
IE=0A
IC=0A
5
2
Cob
1
0.2 0.5 1 2
5 10 20 50
Collector to Base Voltage, VCB (V)
Emitter to Base Voltage, VEB (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
4 of 5
QW-R206-081.D

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