2SC4617G-Q-AE3-R Просмотр технического описания (PDF) - Unisonic Technologies

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2SC4617G-Q-AE3-R

GENERAL PURPOSE TRANSISTOR

Unisonic Technologies 

2SC4617

NPN SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATINGS (Ta = 25°C)

PARAMETER

SYMBOL

RATINGS

UNIT

Collector-Base Voltage

VCBO

60

V

Collector-Emitter Voltage

VCEO

50

V

Emitter-Base Voltage

VEBO

7

V

Collector Current

IC

0.15

A

Collector Power Dissipation SOT-523

PC

SOT-23/SOT-323

PC

150

mW

200

mW

Junction Temperature

TJ

+150

°C

Storage Temperature

TSTG

-55 ~ +150

°C

Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ ELECTRICAL CHARACTERISTICS (Ta= 25°C, unless otherwise specified)

PARAMETER

Collector Base Breakdown Voltage

Collector Emitter Breakdown Voltage

Emitter-base Breakdown Voltage

Collector Cut-Off Current

Emitter Cut-Off Current

DC Current Gain

Collector-Emitter Saturation Voltage

Transition Frequency

Output Capacitance

SYMBOL

TEST CONDITIONS

BVCBO IC= 50μA

BVCEO IC= 1mA

BVEBO IE=50μA

ICBO VCB=60V

IEBO VEB= 7V

hFE VCE=6V, IC=1mA

VCE(SAT) IC=50mA, IB=5mA

fT

VCE=12V, IE= -2mA, f=100MHz

Cob VCE= 12V, IE= 0A, f=1MHz

MIN

60

50

7

120

„ CLASSIFICATION OF hFE

RANK

RANGE

Q

120 ~ 270

R

180 ~ 390

TYP MAX UNIT

V

V

V

0.1 μA

0.1 μA

560

0.4

V

180

MHz

2

3.5 pF

S

270 ~ 560

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 5

QW-R206-081.D

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