2SB886 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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производитель

2SB886

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

Product Specification

2SB886

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA; RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=-5mA; IE=0

VCEsat Collector-emitter saturation voltage IC=-4A; IB=-8mA

VBEsat Base-emitter saturation voltage

IC=-4A; IB=-8mA

ICBO

Collector cut-off current

VCB=-80V; IE=0

IEBO

Emitter cut-off current

VEB=-5V; IC=0

fT

Transition frequency

IC=-4A ; VCE=-5V

hFE

DC current gain

IC=-4A ; VCE=-3V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=-4A;IB1=-IB2=-8mA

RL=12.5Ω,Duty cycle≤1%

VCC=50V

MIN TYP. MAX UNIT

-100

V

-110

V

-1.0 -1.5

V

-2.0

V

-0.1 mA

-3.0 mA

20

MHz

1500 4000

0.7

μs

1.4

μs

1.5

μs

2

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