2SB886 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic
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2SB886 Datasheet PDF : 3 Pages
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JMnic
Silicon PNP Power Transistors
DESCRIPTION
·With TO-220C package
·Complement to type 2SD1196
·DARLINGTON
·High DC current gain
·High current capacity and wide ASO
·Low saturation voltage
APPLICATIONS
·Motor drivers, printer
·Hammer drivers
·Relay drivers,
·Voltage regulator control.
PINNING
PIN
1
2
3
DESCRIPTION
Base
Collector;connected to
mounting base
Emitter
Absolute maximum ratings(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current (DC)
ICM
Collector current-Peak
PC
Collector dissipation
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
Tj
Junction temperature
Tstg
Storage temperature
Product Specification
2SB886
·
VALUE
-110
-100
-6
-8
-12
40
1.75
150
-50~150
UNIT
V
V
V
A
A
W
℃
℃
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