2SB834 Просмотр технического описания (PDF) - Transys Electronics Limited

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2SB834

TO-220 Plastic-Encapsulated PNP Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

TO-220 Plastic-Encapsulated Transistors

2SB834 TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM:

1.5 W (Tamb=25℃)

Collector current

ICM:

-3 A

Collector-base voltage

V(BR)CBO:

-60 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-220

1. BASE

2. COLLECTOR

3. EMITTER

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Base-emitter voltage

Transition frequency

Collector output capacitance

Turn-on Time

Storage Time

Turn-off Time

Symbol

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

hFE(2)

VCE(sat)

VBE

fT

Cob

ton

tstg

toff

Test conditions

Ic=-100µA, IE=0

Ic=-50mA, IB=0

IE=-100µA, IC=0

VCB=-60V, IE=0

VEB=-7V, IC=0

VCE=-5V, IC=-500mA

VCE=-5V, IC=-3A

IC=-3A, IB=-0.3A

VCE=-5V, IC=-500mA

VCE=-5V,I C=-500mA

VCB=-10V, IE=0, f=1MHz

VCC=-30V, Ic=-2A,

IB!=IB2=-0.2A

MIN TYP MAX UNIT

-60

V

-60

V

-7

V

-100 µA

-100 µA

60

200

20

-1

V

-1

V

9

MHz

150

pF

0.4

µs

1.7

µs

0.5

µs

CLASSIFICATION OF hFE(1)

Rank

Range

O

60-120

Y

100-200

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