2SB816 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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производитель

2SB816

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

V(BR)CEO Collector-emitter breakdown voltage IC=-50mA ;RBE=∞

V(BR)CBO Collector-base breakdown voltage

IC=-5mA ;IE=0

V(BR)EBO Emitter-base breakdown voltage

IE=-5mA ;IC=0

VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A

VBE

Base-emitter on voltage

IC=-1A;VCE=-5V

ICBO

Collector cut-off current

VCB=-80V; IE=0

IEBO

Emitter cut-off current

VEB=-4V; IC=0

hFE-1

DC current gain

IC=-1A ; VCE=-5V

hFE-2

DC current gain

IC=-5A ; VCE=-5V

fT

Transition frequency

IC=-1A ; VCE=-5V

COB

Collector output capacitance

f=1MHz;VCB=-10V

Switching times

ton

Turn-on time

tstg

Storage time

tf

Fall time

IC=-1.0A ;IB1=-IB2=-0.1A

VCC=20V;RL=20Ω

‹ hFE-1 Classifications

D

E

60-120

100-200

Product Specification

2SB816

MIN TYP. MAX UNIT

-120

V

-150

V

-6

V

-1.0 -2.0

V

-1.5

V

-0.1 mA

-0.1 mA

60

200

20

15

MHz

220

pF

0.22

μs

0.93

μs

0.37

μs

2

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