2SB1197K Просмотр технического описания (PDF) - Transys Electronics Limited

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2SB1197K

SOT-23-3L Plastic-Encapsulated Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

SOT-23-3L Plastic-Encapsulated Transistors

2SB1197K TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM:

200 mW (Tamb=25℃)

Collector current

ICM:

-800 mA

Collector-base voltage

V(BR)CBO: -40 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

SOT-23-3L

1. BASE

2. EMITTER

3. COLLECTOR

2. 80¡ À0. 05

1. 60¡ À0. 05

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

Collector-base breakdown voltage

Collector-emitter breakdown voltage

Emitter-Base breakdown voltage

Collector cut-off current

Emitter cut-off current

DC current gain

Collector-emitter saturation voltage

Transition frequency

Collector output capacitance

V(BR)CBO

V(BR)CEO

V(BR)EBO

ICBO

IEBO

hFE(1)

VCE(sat)

fT

Cob

Ic=-50µA, IE=0

Ic=-1mA, IB=0

IE=-50µA, IC=0

VCB=-20V, IE=0

VEB=-4V, IC=0

VCE=-3V, IC=-100mA

IC=-0.5A, IB=-50mA

VCE=-5V, IC=-50mA

f=100MHz

VCE=-10V, IC=0

f=1MHz

-40

-32

-5

82

50

200

12

MAX

-0.5

-0.5

390

-0.5

UNIT

V

V

V

µA

µA

V

MHz

30

pF

CLASSIFICATION OF hFE(1)

Rank

Range

Marking

P

82-180

AHP

Q

120-270

AHQ

R

180-390

AHR

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