2SB1188 Просмотр технического описания (PDF) - Unisonic Technologies
Номер в каталоге
Компоненты Описание
производитель
2SB1188 Datasheet PDF : 4 Pages
| |||
2SB1188
■ TYPICAL CHARACTERICS
Static Characteristics
1.6
1.2
0.8
0.4
0
0
12
-IB=9mA
-IB=8mA
-IB=7mA
-IB=6mA
-IB=5mA
-IB=4mA
-IB=3mA
-IB=2mA
-IB=1mA
4
8
12
16 20
-Collector-Emitter Voltage (V)
Power Derating
8
4
0
-50
0
50 100 150 200
Case Temperature, Tc (°C)
Current Gain-Bandwidth Product
103 VCE=5V
102
IIBB==88mmAA
101
10010-2
10-1
100
101
Collector Current, Ic (A)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
PNP SILICON TRANSISTOR
Derating Curve of Safe Operating Areas
150
100
S/b limited
50
0
-50
0
50
100 150 200
Case Temperature, Tc (°C)
Collector Output Capacitance
103 IE=0
f=1MHz
102
101
100100
10-1
10 -2
-Collector-Base Voltage(V)
10-3
Safe Operating Area
10 1 Ic(max),Pulse
Ic(max),DC
0.1mS
10 0
10-1
10
-2
100
101
102
Collector-Emitter Voltage
3 of 4
QW-R208-041.B
Share Link: 