2SA933AS Просмотр технического описания (PDF) - Transys Electronics Limited

Номер в каталоге

Компоненты Описание

производитель

2SA933AS

TO-92S Plastic-Encapsulated Transistors

Transys Electronics Limited 

Transys

Electronics

LIMITED

TO-92S Plastic-Encapsulated Transistors

2SA933AS TRANSISTOR (PNP)

FEATURES

Power dissipation

PCM : 0.2 W (Tamb=25℃)

Collector current

I CM : -0.15 A

Collector-base voltage

V(BR)CBO : -60 V

Operating and storage junction temperature range

TJ, Tstg: -55℃ to +150℃

TO-92S

1. EMITTER

2. COLLECTOR

3. BASE

123

ELECTRICAL CHARACTERISTICS (Tamb=25℃ unless otherwise specified)

Parameter

Symbol

Test conditions

MIN

TYP

Collector-base breakdown voltage

V(BR)CBO

Ic= -50µA , IE=0

-60

Collector-emitter breakdown voltage

V(BR)CEO

IC= -1 mA , IB=0

-50

Emitter-base breakdown voltage

V(BR)EBO

IE=- 50µA, IC=0

-6

Collector cut-off current

ICBO

VCB=-60V, IE=0

Emitter cut-off current

IEBO

VEB= -6V, IC=0

DC current gain

hFE

VCE=-6 V, IC= -0.1A

120

Collector-emitter saturation voltage

Transition frequency

VCEsat

fT

IC= -50mA, IB=-5mA

VCE=-12V, IC=-2mA

120

F=30MHz

MAX

-0.1

-0.1

560

-0.5

UNIT

V

V

V

µA

µA

V

MHz

CLASSIFICATION OF hFE

Rank

Range

Q

120-270

R

180-390

S

270-560

Share Link: