2SA1250 Просмотр технического описания (PDF) - Inchange Semiconductor
Номер в каталоге
Компоненты Описание
производитель
2SA1250 Datasheet PDF : 3 Pages
| |||
Inchange Semiconductor
Silicon PNP Power Transistors
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
V(BR)CEO Collector-emitter breakdown voltage IC=-10mA ;IB=0
V(BR)EBO Emitter-base breakdown voltage
IE=-1mA ;IC=0
VCEsat Collector-emitter saturation voltage IC=-5A; IB=-0.5A
VBEsat Base-emitter saturation voltage
IC=-5A; IB=-0.5A
ICBO
Collector cut-off current
VCB=200V; IE=0
IEBO
Emitter cut-off current
VEB=-7V; IC=0
hFE-1
DC current gain
IC=-2A ; VCE=-1V
hFE-2
DC current gain
IC=-5A ; VCE=-1V
Product Specification
2SA1250
MIN TYP. MAX UNIT
-200
V
-7
V
-1.5
V
-2.0
V
-10 μA
-10 μA
40
200
20
2
Share Link: 