2PD601ARL Просмотр технического описания (PDF) - NXP Semiconductors.
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2PD601ARL Datasheet PDF : 9 Pages
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Nexperia
2PD601ARL; 2PD601ASL
50 V, 100 mA NPN general-purpose transistors
5. Limiting values
Table 6. Limiting values
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
Conditions
Min
VCBO
VCEO
VEBO
IC
ICM
IBM
Ptot
Tj
Tamb
Tstg
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
peak base current
total power dissipation
junction temperature
ambient temperature
storage temperature
open emitter
open base
open collector
single pulse;
tp ≤ 1 ms
single pulse;
tp ≤ 1 ms
Tamb ≤ 25 °C
-
-
-
-
-
-
[1] -
-
−55
−65
Max Unit
60
V
50
V
6
V
100
mA
200
mA
100
mA
250
mW
150
°C
+150 °C
+150 °C
[1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and standard
footprint.
6. Thermal characteristics
Table 7.
Symbol
Rth(j-a)
Thermal characteristics
Parameter
Conditions
thermal resistance from junction in free air
to ambient
Min Typ Max Unit
[1] -
-
500 K/W
[1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint.
7. Characteristics
Table 8. Characteristics
Tamb = 25 °C unless otherwise specified.
Symbol Parameter
Conditions
Min Typ Max Unit
ICBO
collector-base cut-off current VCB = 60 V; IE = 0 A
-
-
10 nA
VCB = 60 V; IE = 0 A;
-
-
5
µA
Tj = 150 °C
IEBO
emitter-base cut-off current VEB = 5 V; IC = 0 A
-
-
10 nA
hFE
DC current gain
VCE = 2 V;
IC = 100 mA
[1] 90
-
-
hFE group R
VCE = 10 V;
IC = 2 mA
210 -
340
hFE group S
VCE = 10 V;
IC = 2 mA
290 -
460
2PD601AXL_1
Product data sheet
Rev. 01 — 6 November 2008
© Nexperia B.V. 2017. All rights reserved
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