2N6420 Просмотр технического описания (PDF) - Quanzhou Jinmei Electronic

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производитель

2N6420

Silicon PNP Power Transistors

Quanzhou Jinmei Electronic 

JMnic

Silicon PNP Power Transistors

CHARACTERISTICS

Tj=25℃ unless otherwise specified

SYMBOL

PARAMETER

CONDITIONS

VCEO(SUS) Collector-emitter sustaining voltage IC=-50mA ; IB=0

VCEsat Collector-emitter saturation voltage IC=-1A; IB=-0.125A

VBE

Base -emitter on voltage

ICEX

Collector cut-off current

ICEO

Collector cut-off current

IC=-1A ; VCE=-10V

VCE=-225V;VBE(off)=-1.5V

TC=150℃

VCE=-150V IB=0

IEBO

Emitter cut-off current

VEB=-6V; IC=0

hFE-1

DC current gain

IC=-0.1A ; VCE=-10V

hFE-2

DC current gain

IC=-0.5A ; VCE=-10V

hFE-3

DC current gain

IC=-1A ; VCE=-10V

Product Specification

2N6420

MIN TYP. MAX UNIT

-175

V

-5.0

V

-1.4

V

-1.0

-3.0

mA

-10

mA

-5.0

mA

40

40

200

10

2

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