2N5114 Просмотр технического описания (PDF) - Calogic, LLC
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2N5114 Datasheet PDF : 2 Pages
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CORPORATION
2N5114 – 2N5116
ELECTRICAL CHARACTERISTICS (TA = 25oC unless otherwise specified) (Continued)
SYMBOL
PARAMETER
2N5114
MIN MAX
2N5115
MIN MAX
2N5116
MIN MAX
IDSS
Drain Current at Zero Gate Voltage
(Note 1)
-30
-90
-15
-60
-5
-25
VGS(f)
Forward Gate-Source Voltage
-1
-1
-1
VDS(on) Drain-Source ON Voltage
-1.3
-0.8
-0.6
rDS(on) Static Drain-Source ON Resistance
75
100
150
rds(on)
Small-Signal Drain-Source ON
Resistance
75
100
150
Ciss
Common-Source Input Capacitance
(Note 2)
25
25
25
Crss
Common-Source Reverse Transfer
Capacitance (Note 2)
7
7
7
NOTES 1. Pulse test; duration = 2ms.
2. For design reference only, not 100% tested.
UNITS TEST CONDITIONS
VGS = -0
mA
VDS = -18V (2N5114)
VDS = -15V (2N5115)
VDS = -15V (2N5116)
IG = -1mA, VDS = 0
VGS = 0
V ID = -15mA (2N5114)
ID = -7mA (2N5115)
ID = -3mA (2N5116)
VGS = 0, ID = -1mA
Ω
VGS = 0, ID = 0, f = 1kHz
VDS = -15V, VGS = 0,
f = 1mHz
VDS = 0
pF VGS = 12V (2N5114)
VGS = 7V (2N5115)
VGS = 5V (2N5116)
f = 1mHz
TEST CONDITIONS
2N5114 2N5115 2N5116
INPUT
10%
VDD
-10V
-6V
-6V
VGG
20V
12V
8V
RL
430Ω 910Ω 2KΩ
VIN
VDS(ON)
90%
tOFF
VIN
td
tr
90%
RG
100Ω
ID(ON) -15mA
VIN
-12V
220Ω
-7mA
-7V
390Ω
-3mA
-5V
10%
-6V
tr
OUTPUT
10%
0040
TYPICAL PERFORMANCE CHARACTERISTICS
Vp vs rDS(ON)
10.0
10.0
9.0
9.0
8.0
8.0
7.0
7.0
6.0
6.0
5.0
5.0
4.0
4.0
3.0
3.0
VDS = 0.1V
2.0
VGS = 0
2.0
Vp vs IDSS
VDS = 20V
VGS = 0
(pulsed)
0.1µF
VGG
1.2K
RG
VDD
RL
51Ω
1.2K
7.5K
SAMPLING
51Ω
SCOPE
51Ω
SAMPLING SCOPE
RISE TIME 0.4ns
INPUT RESISTANCE 10MΩ
INPUT CAPACITANCE 1.5pF
0050
Vp vs gfs
10.0
9.0
8.0
7.0
6.0
5.0
4.0
3.0
VDS = 20V
2.0
VGS = 0
(pulsed)
1.0
0.9
0.8
0.7
0.6
0.5
10
30
100
300
rDS(ON)(ohms)
1,000
0060
1.0
0.9
0.8
0.7
0.6
0.5
1
3
10
30
t DSS (mA)
100
0070
1.0
0.9
0.8
0.7
0.6
0.5
1,000
3,000
10,000
gfs (µV)
30,000
100,000
0080
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