2N5089 Просмотр технического описания (PDF) - Unisonic Technologies

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2N5089

NPN EPITAXIAL SILICON TRANSISTOR

Unisonic Technologies 

2N5088/2N5089

NPN EPITAXIAL SILICON TRANSISTOR

„ ABSOLUTE MAXIMUM RATING (TA=25℃, unless otherwise noted)

PARAMETER

SYMBOL

RATINGS

UNIT

2N5088

30

Collector-Emitter voltage

2N5089

VCEO

25

V

2N5088

35

Collector-Base voltage

2N5089

VCBO

30

V

Emitter-Base Voltage

VEBO

4.5

V

Collector Current-Continuous

IC

100

mA

Power Dissipation

Derate Above 25℃

Junction Temperature

Storage Temperature

PD

TJ

TSTG

625

5

150

-55 ~ +150

mW

mW/℃

℃

℃

Note 1. These ratings are based on a maximum junction temperature of 150 degrees C.

2. These are steady state limits. The factory should be consulted on applications involving pulsed or low duty

cycle operations.

3. Absolute maximum ratings are those values beyond which the device could be permanently damaged.

Absolute maximum ratings are stress ratings only and functional device operation is not implied.

„ THERMAL DATA (TA=25℃, unless otherwise noted)

PARAMETER

Junction to Ambient

Junction to Case

SYMBOL

θJA

θJC

RATINGS

200

83.3

„ ELECTRICAL CHARACTERISTICS (TA=25℃, unless otherwise noted)

UNIT

℃/W

℃/W

PARAMETER

SYMBOL

TEST CONDITIONS

OFF CHARACTERISTICS

Collector-Emitter

Breakdown Voltage

2N5088

2N5089

V(BR)CEO IC=1.0mA, IB=0 (Note)

Collector-Base Breakdown 2N5088

Voltage

2N5089

V(BR)CBO IC=100μA, IE=0

2N5088

Collector Cut-Off Current

2N5089

ICBO

VCB=20V, IE=0

VCB=15V, IE=0

Emitter Cutoff Current

IEBO

VEB=3.0V, IC=0

VEB=4.5V, IC=0

VCE=5.0V, IC=100μA

2N5088

2N5089

DC Current Gain

hFE VCE=5.0V, IC=1.0mA

2N5088

2N5089

VCE=5.0V, IC=10mA

(Note)

2N5088

2N5089

Collector-Emitter Saturation Voltage

VCE(SAT) IC=10mA, IB=1.0mA

Base-Emitter On Voltage

VBE(ON) IC=10mA, VCE=5.0V

SMALL SIGNAL CHARACTERISTICS

Current Gain-Bandwidth Product

fT VCE=5.0mA, IC=500μA, f=20MHz

Collector-Base Capacitance

CCB VCB=5.0V, IE=0, f=100kHz

Emitter-Base Capacitance

CEB VEB=0.5V, IC=0, f=100kHz

Small-Signal Current Gain 2N5088

2N5089

hFE VCE=5.0V, IC=1.0mA, f=1.0kHz

Noise Figure

2N5088

2N5089

NF VCE=5.0V, IC=100μA, RS=10kΩ,

f=10KHz ~ 15.7kHz

Note Pulse Test: Pulse Width≤300μs, Duty Cycle≤2.0%

MIN TYP MAX UNIT

30

V

25

35

V

30

50

nA

50

50

100 nA

300

900

400

1200

350

450

300

400

0.5 V

0.8 V

50

MHz

4 pF

10 pF

350

1400

450

1800

3.0

dB

2.0

UNISONIC TECHNOLOGIES CO., LTD

www.unisonic.com.tw

2 of 3

QW-R201-040.Ba

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