2N3636 Просмотр технического описания (PDF) - Comset Semiconductors
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производитель
2N3636 Datasheet PDF : 3 Pages
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PNP 2N3636 – 2N3637
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
Min Typ Max Unit
IC = -0.1 mA
VCE = -10 V
2N3636 40 -
-
2N3637 80 -
-
IC = -1 mA
VCE = -10 V
2N3636 45 -
-
2N3637 90 -
-
hFE
DC Current Gain (*)
IC = -10 mA
VCE = -10 V
2N3636 50 -
-
2N3637 100 -
-
-
IC = -50 mA
VCE = -10 V
2N3636 50 - 150
2N3637 100 - 300
IC = -150 mA
VCE = -10 V
2N3636 25 -
-
2N3637 50 -
-
VCE(SAT)
Collector-Emitter
IC = -10 mA, IB = -1 mA
saturation Voltage (*) IC = -50 mA, IB = -5 mA
-
-
-
-
0.3
0.5
V
VBE(SAT)
Base-Emitter
IC = -10 mA, IB = -1 mA
saturation Voltage (*) IC = -50 mA, IB = -5 mA
-
-
-
-
0.8
0.9
V
fT
Transition frequency
IC = -30 mA, VCE = -30 V 2N3636
f = 100 MHz
2N3637
150
200
-
-
-
-
MHz
Cob
Output Capacitance IE = 0, VCB = -20 V, f = 100 kHz
-
- 10 pF
Cib
Input Capacitance
IC = 0, VEB = -1 V, f = 100 kHz
-
- 75 PF
SWITCHING TIMES
Symbol
Ratings
ton
Turn-on time
toff
Turn-off time
IC = -50 mA, IB1 = -IB2 = -5 mA
VCC = 100 V, CBE = 4 V
(*) Pulse conditions : tp < 300 µs, δ =1.5%
Value
400
600
Unit
ns
21/09/2012
COMSET SEMICONDUCTORS
2/3
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