2N3418S(2011) Просмотр технического описания (PDF) - Microsemi Corporation

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Компоненты Описание

производитель

2N3418S
(Rev.:2011)

NPN MEDIUM POWER SILICON TRANSISTOR

Microsemi Corporation 

2N3418S thru 2N3421S

ELECTRICAL CHARACTERISTICS (TA = +25°C, unless otherwise noted) continued

SWITCHING CHARACTERISTICS

Parameters / Test Conditions (for all symbols)

Delay Time

Rise Time

Storage Time

Fall Time

Turn-Off Time

VBE(off) = -3.7 V,

IC = 1.0 A, IB1 = 100 mA

VBE(off) = -3.7 V,

IC = 1.0 A, IB2 = -100 mA

VBE(off) = -3.7 V, IC = 1.0 A,

IB2 = -100 mA, RL = 20 Ω

Symbol

td

tr

ts

tf

t off

Min.

Max.

0.08

0.22

1.10

0.20

1.20

SAFE OPERATING AREA (See graph below and reference MIL-STD-750, method 3053)

DC Test

TC = +100 °C, 1 cycle, t > 1.0 s

Test 1

VCE = 5.0 V, IC = 3.0 A

Test 2

VCE = 37 V, IC = 0.4 A

Test 3

VCE = 60 V, IC = 0.185 A

VCE = 80 V, IC = 0.12 A

2N3418S, 2N3420S

2N3419S, 2N3421S

Clamped Switching

TA = +25 °C, IB = 0.5 A, IC = 3.0 A

Unit

µs

µs

µs

COLLECTOR TO EMITTER VOLTAGE VCE (VOLTS)

Maximum Safe Operating Area (continuous dc)

T4-LDS-0192-1, Rev. 1 (111684)

©2011 Microsemi Corporation

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