2N3418(1998) Просмотр технического описания (PDF) - Microsemi Corporation

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производитель

2N3418
(Rev.:1998)

3 Amp, 85V, NPN Silicon Power Transistors JAN, JTX, JTXV, JANS

Microsemi Corporation 

7516 Central Industrial Drive

Riviera Beach, Florida

33404

PHONE: (561) 842-0305

FAX: (561) 845-7813

APPLICATIONS:

• Power Supply

• Pulse Amplifier

• High Frequency Power Switching

FEATURES:

• Meets MIL-S-19500/393

• Collector-Base Voltage: up to 85V

• Peak Collector Current: 5A

• High Power Dissipation in TO-5: 15W @ TC = 100°C

• Fast Switching

DESCRIPTION:

These power transistors are produced by PPC's DOUBLE

DIFFUSED PLANAR process. This technology produces high

voltage devices with excellent switching speeds, frequency

response, gain linearity, saturation voltages, high current gain,

and safe operating areas. They are intended for use in

Commercial, Industrial, and Military power switching, amplifier,

and regulator applications.

Ultrasonically bonded leads and controlled die mount

techniques are utilized to further increase the SOA capability

and inherent reliability of these devices. The temperature

range to 200°C permits reliable operation in high ambients, and

the hermetically sealed package insures maximum reliability

and long life.

2N3418

3 Amp, 85V,

NPN Silicon Power

Transistors

JAN, JTX, JTXV, JANS

TO-5

ABSOLUTE MAXIMUM RATINGS:

SYMBOL

CHARACTERISTIC

VCBO*

VCEO*

VEBO*

IC*

IC*

TSTG*

TJ*

PT*

Collector-Base Voltage

Collector-Emitter Voltage

Emitter-Base Voltage

D.C. Collector Current

Peak Collector Current

Storage Temperature

Operating Junction Temperature

Power Dissipation

TC = 25°C Ambient

TC = 100°C Case

* Indicates MIL-S-19500/393

VALUE

85

60

8

3

5

-65 to 200

-65 to 200

1.0

15

UNITS

Volts

Volts

Volts

Amps

Amps

°C

°C

Watts

Watts

MSC0980A.DOC 12-02-98

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