2N3441 Просмотр технического описания (PDF) - Inchange Semiconductor
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2N3441 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N3441
CHARACTERISTICS
Tj=25℃ unless otherwise specified
SYMBOL
PARAMETER
CONDITIONS
VCEO(SUS) Collector-emitter sustaining voltage IC=100mA ; IB=0
VCE(sat) Collector-emitter saturation voltage IC=2.7A; IB=0.9A
VBE(on) Base -emitter on voltage
ICEX
Collector cut-off current
ICEO
Collector cut-off current
IC=2.7A ; VCE=4V
VCE=140V;VBE(off)=1.5V
VCE=140V;VBE(off)=1.5V TC=150℃
VCE=140V; IB=0
IEBO
Emitter cut-off current
VEB=7V; IC=0
hFE-1
DC current gain
IC=0.5A ; VCE=4V
hFE-2
DC current gain
IC=2.7A ; VCE=4V
MIN TYP. MAX UNIT
140
V
6.0
V
6.7
V
5.0
6.0
mA
10 mA
1.0 mA
25
100
5
2
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