2N3441 Просмотр технического описания (PDF) - Inchange Semiconductor
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2N3441 Datasheet PDF : 3 Pages
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Inchange Semiconductor
Silicon NPN Power Transistors
Product Specification
2N3441
DESCRIPTION
·With TO-66 package
·Continuous collector current-IC=3A
·Power dissipation -PD=25W @TC=25℃
APPLICATIONS
For use in general-purpose switching and
Linear amplifier applications such as:
·Driver for high power outputs
·Series and shunt regulators
·Audio and servo amplifiers
·Solenoid and relay drivers
·Power switching circuits
PINNING (See Fig.2)
PIN
DESCRIPTION
1
Base
2
Emitter
3
Collector
Fig.1 simplified outline (TO-66) and symbol
ABSOLUTE MAXIMUM RATINGS(Ta=25℃)
SYMBOL
PARAMETER
VCBO
Collector-base voltage
VCEO
Collector-emitter voltage
VEBO
Emitter-base voltage
IC
Collector current
IB
Base current
PD
Total power dissipation
Tj
Junction temperature
Tstg
Storage temperature
CONDITIONS
Open emitter
Open base
Open collector
TC=25℃
VALUE
160
140
7
3
2
25
200
-65~200
UNIT
V
V
V
A
A
W
℃
℃
THERMAL CHARACTERISTICS
SYMBOL
PARAMETER
R(th) jc
Thermal resistance junction to case
MAX
7.0
UNIT
℃/W
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