2N2060A Просмотр технического описания (PDF) - Semelab - > TT Electronics plc
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2N2060A Datasheet PDF : 3 Pages
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DUAL MATCHED NPN SILICON TRANSISTOR
2N2060 / 2N2060A
MATCHING CHARACTERISTICS (TA = 25°C unless otherwise stated)
Symbols
Parameters
Test Conditions
HFE1/ HFE2 DC Current Gain Ratio (2)
VBE1- VBE2
Base – Emitter Voltage
Differential
IC = 100µA
IC = 1.0mA
IC = 100µA
IC = 1.0mA
VCE = 5V
VCE = 5V
VCE = 5V
VCE = 5V
∆ (VBE1- VBE2 )
Base –Emitter Voltage
Differential Change Due To
∆T
Temperature
IC = 1.0mA
VCE = 5V
TA = -55°C to +125°C
MECHANICAL DATA
Dimensions in mm (inches)
8.51 (0.335)
9.40 (0.370)
7.75 (0.305)
8.51 (0.335)
Min
0.9
0.9
Typ
Max
1.0
1.0
3.0
5.0
Units
-
mV
5.0 µV/°C
1.02
(0.040)
Max.
0.41 (0.016)
0.53 (0.021)
5.08
(0.200)
2.54
(0.100)
2.54
(0.100)
4
5
3
6
2
1
0.74 (0.029)
1.14 (0.045)
45˚
0.71 (0.028)
0.86 (0.034)
TO-77 (MO-002AF) METAL PACKAGE
PIN 1 – Collector
PIN 4 – Emitter
PIN 2 – Base
PIN 5 – Base
PIN 3 – Emitter
PIN 6 – Collector
Semelab Limited
Coventry Road, Lutterworth, Leicestershire, LE17 4JB
Telephone +44 (0) 1455 556565 Fax +44 (0) 1455 552612 Email: sales@semelab-tt.com
Document Number 8570
Website: http://www.semelab-tt.com
Issue 1
Page 3 of 3
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