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Компоненты Описание
2N1893 Просмотр технического описания (PDF) - Comset Semiconductors
Номер в каталоге
Компоненты Описание
производитель
2N1893
MEDIUM POWER TRANSISTOR
Comset Semiconductors
2N1893 Datasheet PDF : 3 Pages
1
2
3
NPN 2N1893
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
I
CBO
I
EBO
V
CBO
Collector Cutoff Current
Emitter Cutoff Current
Collector Base
Sustaining Voltage
V
CB
= 90 V
I
E
= 0
V
EB
= 5 V, I
B
= 0
T
amb
= 25°C
T
amb
= 150°C
I
C
= 100 mA, I
E
= 0
V
CEO
Collector Emitter
Sustaining Voltage (*)
I
C
= 10 mA, I
B
= 0
V
CER
Collector Base
Breakdown Voltage (*)
I
C
= 10 mA, R
BE
= 10
Ω
V
EBO
Emitter Base
Breakdown Voltage
I
E
= 100 µA, I
C
= 0
h
FE
V
CE(SAT)
V
BE(SAT)
f
T
DC Current Gain (*)
Collector-Emitter
saturation Voltage (*)
Base-Emitter saturation
Voltage (*)
Transition Frequency
I
C
= 0.1 mA, V
CE
= 10 V
I
C
= 10 mA
T
amb
= 25°C
V
CE
= 10 V
T
amb
= -55°C
I
C
= 150 mA, V
CE
= 10 V
I
C
= 50 mA, I
B
= 5 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 50 mA, I
B
= 5 mA
I
C
= 150 mA, I
B
= 15 mA
I
C
= 50 mA, V
CE
= 10 V
f= 20 MHz
C
C
Collector Capacitance
I
E
= i
e
= 0 ,V
CB
= 10 V
f = 1MHz
C
e
Base Capacitance
I
C
= i
c
= 0 ,V
EB
= 0.5 V
f = 1MHz
(*) Pulse conditions : tp < 300
µ
s,
δ
=2%.
Min Typ Max
- - 10
- - 15
- - 10
120 - -
80 - -
100 - -
7- -
20 - -
20 - -
35 -
40 - 120
- - 0.9
- - 0.5
- - 1.2
- - 1.3
50 - -
- - 15
- - 85
Unit
nA
µA
nA
V
V
V
V
-
V
V
MHz
pF
pF
11/09/2012
COMSET SEMICONDUCTORS
3/3
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