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2N1613 Просмотр технического описания (PDF) - STMicroelectronics

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Компоненты Описание
производитель
2N1613
ST-Microelectronics
STMicroelectronics ST-Microelectronics
2N1613 Datasheet PDF : 5 Pages
1 2 3 4 5
2N1613
2N1711
SWITCHES AND UNIVERSAL AMPLIFIERS
DESCRIPTION
The 2N1613 and 2N1711 are silicon planar epitaxial
NPN transistors in Jedec TO-39 metal case. They
are designed for use in high-performance amplifier,
oscillator and switching circuits.
The 2N1711 is also used to advantage in amplifiers
where low noise is an important factor.
Products approved to CECC 50002-104 avail-
able on request.
TO-39
INTERNAL SCHEMATIC DIAGRAM
ABSOLUTE MAXIMUM RATINGS
Symbol
VCBO
VCER
VEBO
IC
Pto t
Tstg, Tj
Parameter
Collector-base Voltage (IE = 0)
Collector-emitter Voltage (RBE 10 )
Emitter-base Voltage (IC = 0)
Collector Current
Total Power Dissipation at T amb 25 °C
at T c as e 25 °C
at T c as e 100 °C
Storage and Junction Temperature
January 1989
V al ue
75
50
7
500
0.8
3
1.7
– 65 to 200
Unit
V
V
V
mA
W
W
W
°C
1/5

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