2N60-A-T2Q-K Просмотр технического описания (PDF) - Unisonic Technologies
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2N60-A-T2Q-K Datasheet PDF : 6 Pages
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2N60
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°С, unless otherwise specified)
PARAMETER
SYMBOL
RATINGS
UNIT
2N60-A
600
V
Drain-Source Voltage
2N60-B
VDSS
650
V
Gate-Source Voltage
Avalanche Current (Note 2)
Drain Current
Continuous
Pulsed (Note 2)
Avalanche Energy Single Pulsed (Note 3)
Repetitive (Note 2)
Peak Diode Recovery dv/dt (Note 4)
VGSS
IAR
ID
IDM
EAS
EAR
dv/dt
±30
V
2.0
A
2.0
A
8.0
A
140
mJ
4.5
mJ
4.5
V/ns
TO-220
54
W
TO-220F/TO-220F1
23
W
Power Dissipation
TO-251/TO-251L/TO-252
PD
(TC = 25°С)
44
W
TO-262
54
W
TO-126
40
W
Junction Temperature
TJ
+150
°С
Ambient Operating Temperature
TOPR
-55 ~ +150
°С
Storage Temperature
TSTG
-55 ~ +150
°С
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating : Pulse width limited by TJ
3. L=64mH, IAS=2.0A, VDD=50V, RG=25 Ω, Starting TJ = 25°C
4. ISD≤2.4A, di/dt≤200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
THERMAL DATA
PARAMETER
PACKAGE
TO-220
TO-220F/TO-220F1
Junction to Ambient TO-251/TO-251L/TO-252
TO-262
TO-126
TO-220
TO-220F/TO-220F1
Junction to Case TO-251/TO-251L/TO-252
TO-262
TO-126
SYMBOL
θJA
θJc
RATINGS
62.5
62.5
100
62.5
89
2.32
5.5
2.87
2.32
3.12
UNIT
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
°С/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
2 of 6
QW-R502-053,Ma
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