1N60AL-TN3-B Просмотр технического описания (PDF) - Unisonic Technologies
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1N60AL-TN3-B Datasheet PDF : 7 Pages
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1N60A
Power MOSFET
ABSOLUTE MAXIMUM RATINGS (TC = 25°C, unless otherwise specified.)
PARAMETER
SYMBOL
RATINGS
UNIT
Drain-Source Voltage
Gate-Source Voltage
Continuous Drain Current
Pulsed Drain Current (Note 2)
Avalanche Energy
Single Pulse(Note 3)
Repetitive(Note 2)
Peak Diode Recovery dv/dt (Note 4)
SOT-223
VDSS
VGSS
ID
IDM
EAS
EAR
dv/dt
600
V
±30
V
0.5
A
2
A
50
mJ
3.6
mJ
4.5
V/ns
6.25
Power Dissipation (TC=25°C) TO-251/TO-252
TO-92
SOT-223
PD
Derate above 25°C
TO-251/TO-252
34
W
3
0.05
0.27
W/°C
TO-92
0.025
Junction Temperature
TJ
+150
°C
Operating Temperature
TOPR
-55 ~ +150
°C
Storage Temperature
TSTG
-55 ~ +150
°C
Notes: 1. Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
2. Repetitive Rating: Pulse width limited by maximum junction temperature
3. L=92mH, IAS=0.8A, VDD=50V, RG=0Ω, Starting TJ=25°C
4. ISD≤1.0A, di/dt≤100A/μs, VDD≤BVDSS, Starting TJ=25°C
THERMAL DATA
PARAMETER
SOT-223
Junction to Ambient
TO-251/TO-252
TO-92
SOT-223
Junction to Case
TO-251/TO-252
TO-92
SYMBOL
θJA
θJC
RATINGS
150
110
160
20
5
80
UNIT
°C/W
°C/W
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
3 of 7
QW-R502-091.K
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