1N60AL-TM3-T Просмотр технического описания (PDF) - Unisonic Technologies
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1N60AL-TM3-T Datasheet PDF : 7 Pages
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UNISONIC TECHNOLOGIES CO., LTD
1N60A
0.5A, 600V N-CHANNEL
POWER MOSFET
DESCRIPTION
The UTC 1N60A is a high voltage MOSFET and is designed to
have better characteristics, such as fast switching time, low gate
charge, low on-state resistance and have a high rugged avalanche
characteristics. This power MOSFET is usually used at high speed
switching applications in power supplies, PWM motor controls, high
efficient DC to DC converters and bridge circuits.
FEATURES
* RDS(ON) <15Ω@VGS = 10V.
* Ultra Low gate charge (typical 8.0nC)
* Low reverse transfer capacitance (CRSS = 3.0 pF(max))
* Fast switching capability
* Avalanche energy specified
* Improved dv/dt capability, high ruggedness
SYMBOL
Power MOSFET
ORDERING INFORMATION
Ordering Number
Lead Free
Halogen Free
Package
1N60AL-AA3-R
1N60AG-AA3-R
SOT-223
1N60AL-TM3-T
1N60AG-TM3-T
TO-251
1N60AL-TN3-R
1N60AG-TN3-R
TO-252
1N60AL-T92-B
1N60AG-T92-B
TO-92
1N60AL-T92-K
1N60AG-T92-K
TO-92
Note: Pin Assignment: G: Gate D: Drain S: Source
Pin Assignment
1
2
3
G
D
S
G
D
S
G
D
S
G
D
S
G
D
S
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