1N60AL-T92-R(2005) Просмотр технического описания (PDF) - Unisonic Technologies
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1N60AL-T92-R Datasheet PDF : 8 Pages
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1N60A
TYPICAL PERFORMANCE CHARACTERISTICS
Output Characteristics
Power MOSFET
Transfer Characteristics
100
V GS
Top: 15.0V
10 .0V
8 .0V
7 .0V
6 .0V
5.5 V
5V
Bottorm :4.5V
VDS=50V
250μs Pulse Test
4.5V
100
150℃
25℃
10-1
100
250μs Pulse Test
TC=25℃
101
Drain-Source Voltage, VDS (V)
10-1
2
4
6
8
10
Gate-Source Voltage, VGS (V)
On-Resistance vs. Drain Current
30 TJ=25℃
25
20
15
VGS=10V
VGS=20V
10
5
0
0.0 0.5 1.0 1.5 2.0 2.5
Drain Current, ID (A)
Source- Drain Diode Forward Voltage
VGS=0V
250μs Pulse Test
100
25℃
150℃
10-1
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
Source-Drain Voltage, VSD (V)
Capacitance vs. Drain-Source Voltage
200
150
CISS
CISS=CGS+CGD
(CDS=shorted)
COSS=CDS+CGD
CRS S= CGD
100
COSS
50
CRSS
VGS=0V
f = 1MHz
0
10-1
100
101
Drain-SourceVoltage, VDS (V)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
Gate Charge vs. Gate-Source Voltage
12
VDS=480V
10 VDS=300V
VDS=120V
8
6
4
2
ID=1.0A
0
0
2
4
6
8
10
Total Gate Charge, QG (nC)
6 of 8
QW-R502-091,B
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