DatasheetQ Logo
Electronic component search and free download site. Transistors,MosFET ,Diode,Integrated circuits

1N5819 Просмотр технического описания (PDF) - HY ELECTRONIC CORP.

Номер в каталоге
Компоненты Описание
производитель
1N5819
HY
HY ELECTRONIC CORP. HY
1N5819 Datasheet PDF : 3 Pages
1 2 3
RATING AND CHARACTERTIC CURVES
1N5817 thru 1N5819
FIG. 1 – FORWARD CURRENT DERATING CURVE
1.0
0.8
0.6
0.4
0.2
SINGLE PHASE HALF WAVE 60Hz
0 RESISTIVE OR INDUCTIVE LOAD
25
50
75
100
125
150 175
AMBIENT TEMPERATURE ()
1000
FIG. 3 – TYPICAL JUNCTION CAPACITANCE
100
TJ = 25°Cf = 1MHz
10
1
4
10
40
100
REVERSE VOLTAGE ,VOLTS
FIG. 2 – MAXIMUM NON-REPETITIVE SURGE CURRENT
40
30
20
10
PULSE WIDTH 8.3mS
SINGLE HALF-SINE-WAVE
(JEDEC METHOD)
0
1
2
5
10 20
50 100
NUMBER OF CYCLES AT 60Hz
FIG.4-TYPICAL FORWARD CHARACTERISTICS
100
1N5817
10
1N5818
1N5819
1.0
TJ = 25°C
0.1
0
PULSE WIDTH 300us
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8
INSTANTANEOUS FORWARD VOLTAGE,VOLTS
The cruve graph is for reference only, can't be the basis for judgment(曲线图仅供参考)!
Rev. 7, 16-Mar-2017

Share Link: 

datasheetq.com  [ Privacy Policy ]Request Datasheet ] [ Contact Us ]