1N5819 Просмотр технического описания (PDF) - HY ELECTRONIC CORP.
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1N5819 Datasheet PDF : 3 Pages
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1N5817 thru 1N5819
SCHOTTKY BARRIER RECTIFIERS
FEATURES
● Metal-Semiconductor junction with gard ring
● Epitaxial construction
● Low forward voltage drop
● High current capability
● The plastic material carries UL recognition 94V-0
● For use in low vlotage, high frequency inverters,
free wheeling, and polarity protection applications
MECHANICAL DATA
●Case: JEDEC DO-41 molded plastic
●Polarity: Color band denotes cathode
●Weight: 0.012 ounces , 0.34 grams
●Mounting position: Any
REVERSE VOLTAGE - 20 to 40 Volts
FORWARD CURRENT - 1.0 Ampere
DO- 41
1.0(25.4)
MIN.
.034(0.9)
.028(0.7)
DIA
.205(5.2)
.165(4.2)
1.0(25.4)
MIN.
.107(2.7)
.080(2.0)
DIA
Dimensions in inches and (millimeters)
MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS
Rating at 25℃ ambient temperature unless otherwise specified.
Single phase, half wave ,60Hz, resistive or inductive load.
For capacitive load, derate current by 20%
CHARACTERISTICS
Maximum Recurrent Peak Reverse Voltage
SYMBOL
VRRM
Maximum RMS Voltage
VRMS
Maximum DC Blocking Voltage
VDC
Maximum Average Forward
I(AV)
Rectified Current
@TA =75℃
Peak Forward Surge Current
8.3ms Single Half Sine-Wave
IFSM
Super Imposed on Rated Load(JEDEC Method)
Maximum Forward Voltage at 1.0A DC
VF
Maximum Forward Voltage at 3.0A DC
VF
Maximum DC Reverse Current
@TJ=25℃
IR
at Rated DC Bolcking Voltage
@TJ=100℃
Typical Junction Capacitance (Note1)
CJ
Typical Thermal Resistance (Note2)
RθJA
Operating Temperature Range
TJ
Storage Temperature Range
TSTG
NOTES: 1.Measured at 1.0 MHz and applied reverse voltage of 4.0V DC
2.Thermal resistance junction to ambient,
3.The typical data above is for reference only(典型值仅供参考).
1N5817
20
14
20
0.450
0.750
1N5818
30
21
30
1.0
25
0.550
0.875
1.0
10
110
80
-55 to +150
-55 to +150
1N5819
40
28
40
0.600
0.900
UNIT
V
V
V
A
A
V
V
mA
pF
℃/W
℃
℃
Rev. 7, 16-Mar-2017
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