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1N5818 Просмотр технического описания (PDF) - General Semiconductor

Номер в каталоге
Компоненты Описание
производитель
1N5818
GE
General Semiconductor GE
1N5818 Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES 1N5817 THRU 1N5819
1
0.75
FIG. 1 - FORWARD CURRENT DERATING CURVE
RESISTIVE OR
INDUCTIVE LOAD
0.375" (9.5mm)
LEAD LENGTH
0.5
0.25
0
0
20 40 60 80 100 120 140
LEAD TEMPERATURE, °C
FIG. 3 - TYPICAL INSTANTANEOUS
FORWARD CHARACTERISTICS
50
10
TJ=125°C
PULSE WIDTH=300µs
1% DUTY CYCLE
1
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
TJ=TJ max.
8.3ms SINGLE HALF SINE-WAVE
25
(JEDEC Method)
20
15
10
5
0
1
10
100
NUMBER OF CYCLES AT 60 HZ
FIG. 4 - TYPICAL REVERSE
CHARACTERISTICS
100
10
TJ=125°C
1
TJ=25°C
0.1
0.01
0
0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
400
100
TJ=25°C
f=1.0 MHz
Vsig=50mVp-p
0
TJ=75°C
0.01
TJ=25°C
0.001
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
10
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
0.1
0.01
0.1
1
10
100
t, PULSE DURATION, sec.

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