RF2416 Просмотр технического описания (PDF) - RF Micro Devices

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RF2416

DUAL-BAND 2.7V LOW NOISE AMPLIFIER

RF Micro Devices 

RF2416

Preliminary

Application Notes

Bypass Mode Configurations

The RF2416 may be placed into either high gain or bypass mode via the HB SELECT and LB SELECT pins for high

band and low band operation, respectively. The high gain state is selected by asserting the select pin for the appropriate

band to a voltage level of less than 0.8V. For Bypass operation, there are two possible methods for placing the RF2416

into this low gain state. The table below shows the two possible Bypass states for each mode.

RF2416 Bypass Mode Possibilities

Gain Select

(HB Mode)

HB BIAS (V)

4

2.7

0

2.7

2.7

Gain Select

(LB Mode)

LB BIAS (V)

2.7

0

2.7

2.7

VCC1_HB and

VCC2_HB (V)

2.78

2.78

VCC1_LB (V)

2.78

2.78

Current (mA)

1.4

1.9

Current (mA)

0.8

1.5

For both Bypass configurations, the select pin for the appropriate band must be placed at a level greater than or equal to

1.8V. The difference between the Bypass possibilities is determined by the specific application’s ability to change the

voltage of the bias pins independently of VCC. The advantage of the ability to assert the bias pins to 0V when in Bypass

mode is shown by the decreased current draw when in this Bypass configuration.

4-204

Rev A2 010810

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