1N5230 Просмотр технического описания (PDF) - Unspecified

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Компоненты Описание

производитель

1N5230

SILICON ZENER DIODES

Unspecified 

1N5221 THRU 1N5281

SILICON ZENER DIODES

REVERSE VOLTAGE:

2.4 TO 200 VOLTS

POWER DISSIPATION: 500 mWATTS

FEATURES

· Planar Die construction

· 500mW Power Dissipation

· Ideally Suited for Automated Assembly Processes

· Standard Zener voltage tolerance is ±20%. Add suffix “A” for

±10% tolerance, suffix “B” for ±5% tolerance, or suffix “C” for

±2% tolerance. Other tolerances and other, non-standard Zener

voltages are available upon request.

MECHANICAL DATA

Case: Molded glass DO-35

Lead: Axial leads, solderable per MIL-STD-202,

method 208 guaranteed

Polarity: Color band denotes cathode end

Mounting position: Any

Weight: approx. 0.13 g

DO-35

Dimensions in inches and (millimeters)

Absolute Maximum Ratings

Tamb = 25 °C, unless otherwise specified

Parameter

Power Dissipation at Tamb=75℃

Zener Current

Junction Temperature

Storage Temperature Range

Symbol

PD

IZ

TJ

Tstg

Value

500

PD/VZ

200

-65 to +200

Unit

mWatt

mAmp

℃

℃

Thermal Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Junction Ambient at l = 9.5 mm (3/8 "), TL=constant

Symbol

RthJA

Value

Unit

300

K/W

Electrical Characteristics

Tamb = 25 °C, unless otherwise specified

Parameter

Forward Voltage at IF = 200 mA

Symbol

VF

Min.

Typ.

Max.

Unit

1.1

Volt

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