1N5246B Просмотр технического описания (PDF) - Willas Electronic Corp.

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производитель

1N5246B

Silicon Z–Diodes

Willas Electronic Corp. 

WILLAS

1N5221B THRU 1N5267B

Silicon Z–Diodes

Unit: inch (mm)

Features

DO-35

D Plannar Die constuction

D 500mW Power Dissipation

D Ideally Suited for Automated Assembly Processes

D VZ–tolerance ± 5%

Applications

Voltage stabilization

MECHANICAL DATA

Approx. Weight: 0.136 grams

1.02(26.0)

MIN.

.022(0.55)

.018(0.45)

.153(3.6)

.132(3.0)

1.02(26.0)

MIN.

.087(2.2)

.067(1.7)

Absolute Maximum Ratings

Tj = 25_C

Parameter

Power dissipation

Z–current

Test Conditions

Tamb=25°C

Junction temperature

Storage temperature range

Type

Symbol Value Unit

PTOT

500

mW

IZ

PV/VZ

mA

Tj

175

°C

Tstg –65...+175 °C

Maximum Thermal Resistance

Tj = 25_C

Parameter

Test Conditions

Junction ambient

l=9.5mm (3/8”), TL=constant

Symbol

Value

Unit

RthJA

300

K/W

Electrical Characteristics

Tj = 25_C

Parameter

Test Conditions

Forward voltage

IF=200mA

Type

Symbol Min Typ Max Unit

VF

1.1 V

2010.06

WILLS ELECTRONIC CORP.

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