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1N4933 Просмотр технического описания (PDF) - General Semiconductor

Номер в каталоге
Компоненты Описание
производитель
1N4933
GE
General Semiconductor GE
1N4933 Datasheet PDF : 2 Pages
1 2
RATINGS AND CHARACTERISTIC CURVES 1N4933 THRU 1N4937
FIG.1 - FORWARD CURRENT DERATING
CURVE
1.0
I(pk)
I(AV)
=π
0.8
0.375” (9.5mm)
LEAD LENGTH
0.6
CAPACITIVE LOADS
I(pk) 5.0
0.4 I(AV) = 10
20
FIG. 2 - MAXIMUM NON-REPETITIVE PEAK FORWARD
SURGE CURRENT
30
TA=75°C
8.3ms SINGLE HALF SINE-WAVE
(JEDEC Method)
20
1.0 CYCLE
10
0.2
0
0 25 50 75 100 125 150 175
AMBIENT TEMPERATURE, °C
0
1
10
100
NUMBER OF CYCLES AT 60 HZ
FIG. 3 - TYPICAL INSTANTANEOUS FORWARD
CHARACTERISTICS
20
10
TJ=25°C
PULSE WIDTH=300µs
1% DUTY CYCLE
1
0.1
0.01
0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
INSTANTANEOUS FORWARD VOLTAGE,
VOLTS
100
FIG. 5 - TYPICAL JUNCTION CAPACITANCE
TJ=25°C
f=1.0 MHz
Vsig=50mVp-p
10
FIG. 4 - TYPICAL REVERSE CHARACTERISTICS
100
10
TJ=100°C
1
0.1
TJ=25°C
0.01
0
20
40
60
80
100
PERCENT OF RATED PEAK REVERSE
VOLTAGE, %
FIG. 6 - TYPICAL TRANSIENT THERMAL IMPEDANCE
100
10
1
1
0.1
1
10
100
REVERSE VOLTAGE, VOLTS
0.1
0.01
0.1
1
10
100
t, PULSE DURATION, sec.

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