1N4531 Просмотр технического описания (PDF) - Semtech Electronics LTD.
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1N4531 Datasheet PDF : 1 Pages
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1N4531, 1N4532
SILICON EPITAXIAL PLANAR DIODES
Fast Switching Diode
Max. 0.45
Max. 1.9
Min. 27.5
Black
Cathode Band
Black
Part No.
XXX Max. 2.9
Min. 27.5
Absolute Maximum Ratings (Ta = 25 OC)
Parameter
Repetitive Peak Reverse Voltage
Continuous Reverse Voltage
Continuous Forward Current
Repetitive Peak Forward Current
Non-repetitive Peak Forward Current
Power Dissipation
Junction Temperature
Storage Temperature Range
at t = 1 µs
at t = 1 ms
at t = 1 s
Characteristics at Tj = 25 OC
Parameter
Forward Voltage
at IF = 10 mA
Reverse Current
at VR = 20 V
at VR = 50 V
at VR = 20 V, Tj = 150 OC
at VR = 50 V, Tj = 150 OC
Diode Capacitance
at f = 1 MHz
Reverse Recovery Time
at IF = 10 mA, IR = 60 mA, RL = 100 Ω
at IF = 10 mA, IR = 10 mA, RL = 100 Ω
Forward Recovery Voltage
at IF = 100 mA, tr ≤ 30 ns
Thermal Resistance from Junction to Ambient
1N4531
1N4532
1N4531
1N4532
1N4531
1N4532
1N4531
1N4532
1N4532
Symbol
VRRM
VR
IF
IFRM
IFSM
Ptot
Tj
TS
Symbol
VF
IR
IR
IR
IR
Cd
Cd
trr
trr
trr
Vfr
RthJA
Glass Case DO-34
Dimensions in mm
Value
Unit
75
V
75
V
200
mA
450
mA
4
1
A
0.5
500
mW
200
OC
- 65 to + 200
OC
Max.
Unit
1
V
25
nA
100
nA
50
µA
100
µA
4
pF
2
pF
4
ns
2
ns
4
ns
3
V
350
K/W
SEMTECH ELECTRONICS LTD.
(Subsidiary of Sino-Tech International Holdings Limited, a company
listed on the Hong Kong Stock Exchange, Stock Code: 724)
®
Dated : 23/06/2007
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