1N4531 Просмотр технического описания (PDF) - NXP Semiconductors.

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Компоненты Описание

производитель

1N4531

High-speed diodes

NXP Semiconductors. 

NXP Semiconductors

High-speed diodes

Product data sheet

1N4531; 1N4532

FEATURES

• Hermetically sealed leaded glass

SOD68 (DO-34) package

• High switching speed: max. 4 ns

• Continuous reverse voltage:

max. 75 V

• Repetitive peak reverse voltage:

max. 75 V

• Repetitive peak forward current:

max. 450 mA.

APPLICATIONS

• High-speed switching

• Protection diodes in reed relays.

DESCRIPTION

The 1N4531, 1N4532 are high-speed switching diodes fabricated in planar

technology, and encapsulated in hermetically sealed leaded glass

SOD68 (DO-34) packages.

handbook, halfpkage

a

MAM156

The diodes are type branded.

Fig.1 Simplified outline (SOD68; DO-34) and symbol.

LIMITING VALUES

In accordance with the Absolute Maximum Rating System (IEC 134).

SYMBOL

PARAMETER

VRRM

VR

IF

IFRM

IFSM

repetitive peak reverse voltage

continuous reverse voltage

continuous forward current

repetitive peak forward current

non-repetitive peak forward current

Ptot

total power dissipation

Tstg

storage temperature

Tj

junction temperature

CONDITIONS

see Fig.2

square wave; Tj = 25 °C prior to

surge; see Fig.4

t = 1 µs

t = 1 ms

t=1s

Tamb = 25 °C

MIN.

−

−

−

−

MAX.

75

75

200

450

UNIT

V

V

mA

mA

−

4A

−

1A

−

0.5 A

−

500 mW

−65 +200 °C

−

200 °C

1996 Sep 03

2

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