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Номер в каталоге
Компоненты Описание
DG406BP25(2000) Просмотр технического описания (PDF) - Dynex Semiconductor
Номер в каталоге
Компоненты Описание
производитель
DG406BP25
(Rev.:2000)
Gate Turn-off Thyristor
Dynex Semiconductor
DG406BP25 Datasheet PDF : 19 Pages
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1000
750
Conditions:
T
j
= 25˚C, I
FGM
= 30A,
C
S
= 1.0µF,
dI/dt = 300A/µs,
dI
FG
/dt = 30A/µs
500
250
V
D
= 2000V
V
D
= 1500V
V
D
= 1000V
DG406BP25
0
0
250
500
750
1000
1250
On-state current I
T
- (A)
Fig.8 Turn-on energy vs on-state current
2000
1500
Conditions:
T
j
= 25˚C, I
T
= 1000A,
C
S
= 1.0µF, R
S
= 10 Ohms
dI/dt = 300A/µs,
dI
FG
/dt = 30A/µs
1500
1000
500
V
D
= 2000V
V
D
= 1500V
V
D
= 1000V
0
0
20
40
60
80
Peak forward gate current I
FGM
- (A)
F
F
I
i
G
g.9
9
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