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KM4211IC8TR3 Просмотр технического описания (PDF) - Fairchild Semiconductor

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KM4211IC8TR3 Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
KM4211
DATA SHEET
KM4211 Electrical Characteristics (Vs = +2.7V, G = 2, RL = 2kto Vs/2, Rf = 2.5k; unless noted)
PARAMETERS
Case Temperature
CONDITIONS
TYP
+25°C
MIN & MAX UNITS NOTES
+25°C
Frequency Domain Response
-3dB bandwidth
G = +1, Vo = 0.05Vpp
35
G = +2, Vo < 0.2Vpp
18
full power bandwidth
G = -1, Vo = 2Vpp
8
gain bandwidth product
20
MHz
1
MHz
MHz
MHz
Time Domain Response
rise and fall time
settling time to 0.1%
overshoot
slew rate
0.2V step
2V step
2V step, G = -1
2V step, G = -1
18
ns
140
ns
<1
%
27
V/µs
Distortion and Noise Response
2nd harmonic distortion
3rd harmonic distortion
THD
input voltage noise
crosstalk
DC Performance
input offset voltage
average drift
input bias current
average drift
input offset current
power supply rejection ratio
open loop gain
quiescent current
2Vpp, 100kHz
2Vpp, 100kHz
2Vpp, 100kHz
>10kHz
100kHz, Vo = 0.2Vpp
DC
78
dBc
66
dBc
65
dB
21
nV/Hz
98
dB
-1.5
mV
20
µV/°C
0.4
µA
1
nA/°C
7
nA
60
dB
62
dB
208
µA
Input Characteristics
input resistance
input capacitance
input common mode voltage range
common mode rejection ratio
Output Characteristics
output voltage swing
linear output current
short circuit output current
power supply operating range
DC, Vcm = 0V to Vs - 1.5
RL = 10kto Vs/2
RL = 2kto Vs/2
>10
M
1.35
pF
-0.3 to 3.8
V
85
dB
0.08 to 4.88
V
0.1 to 4.8
V
±8.5
mA
±13
mA
5
2.5 to 5.5
V
Min/max ratings are based on product characterization and simulation. Individual parameters are tested as noted. Outgoing quality levels
are determined from tested parameters.
NOTES:
1) For G = +1, Rf = 0.
REV. 1 June 2001
3

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