MG65PB16 Просмотр технического описания (PDF) - Oki Electric Industry

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MG65PB16

0.25µm Embedded DRAM/Customer Structured Arrays

Oki Electric Industry 

––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––––– s MG63P/64P/65P s

ELECTRICAL CHARACTERISTICS

Absolute Maximum Ratings (VSS = 0 V, TJ = 25°C) [1]

Parameter

Symbol

Rated Value

Unit

Power supply voltage

Input voltage (Input Buffer)

Output voltage (Output Buffer)

Input current (Input Buffer)

Output current per I/O (Output Buffer)

Storage temperature

VDD Core (2.5 V)

VDD I/O (3.3 V)

VI

VO

II

IO

TSTG

-0.3 to +3.6

-0.3 to +4.6

V

-0.3 to +4.6

-0.3 to +4.6

-10 to +10

mA

-24 to +24

-65 to +150

°C

1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are exceeded. Functional operation should be restricted to the conditions

in the other specifications of this data sheet. Exposure to absolute maximum rating conditions for extended periods may affect device reliability.

Recommended Operating Conditions (VSS = 0 V)

Parameter

Symbol

Power supply voltage

Junction temperature

VDD Core (2.5 V)

VDD I/O (3.3 V)

Tj

Rated Value

Unit

+2.25 to +2.75

V

+3.0 to +3.6

-40 to +85

°C

Oki Semiconductor

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