SPP06N80C3(2007) Просмотр технического описания (PDF) - Infineon Technologies
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производитель
SPP06N80C3 Datasheet PDF : 13 Pages
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13 Forward characteristics of body diode
IF = f (VSD)
parameter: Tj , tp = 10 µs
10 2 SPP06N80C3
14 Avalanche SOA
IAR = f (tAR)
par.: Tj ≤ 150 °C
6
A
A
SPP06N80C3
SPA06N80C3
10 1
4
3
10 0
10 -1
0
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
0.4 0.8 1.2 1.6 2 2.4 V 3
VSD
2
TJ(Start) = 25°C
1
TJ(Start) = 125°C
0
10
-3
10 -2
10 -1
10 0
10 1
10 2
µs 10 4
tAR
15 Avalanche energy
EAS = f (Tj)
par.: ID = 1.2 A, VDD = 50 V
250
mJ
16 Drain-source breakdown voltage
V(BR)DSS = f (Tj)
980 SPP06N80C3
V
200
175
150
125
100
75
50
25
0
25
50
75
100
°C
150
Tj
940
920
900
880
860
840
820
800
780
760
740
720
-60 -20
20
60 100 °C
180
Tj
Rev. 2.6
Page 8
2007-08-30
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