SPP06N80C3(2007) Просмотр технического описания (PDF) - Infineon Technologies
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SPP06N80C3 Datasheet PDF : 13 Pages
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SPP06N80C3
SPA06N80C3
9 Typ. drain-source on resistance
RDS(on)=f(ID)
parameter: Tj=150°C, VGS
5
Ω
4V
5V
6V
4
3.5
4.5V
3
5.5V
2.5
7V
8V
10V
2
20V
1.5
1
0
2
4
6
8 A 11
ID
11 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x RDS(on)max
parameter: tp = 10 µs
20
A
25°C
16
14
12
10 Drain-source on-state resistance
RDS(on) = f (Tj)
parameter : ID = 3.8 A, VGS = 10 V
SPP06N80C3
5.5
Ω
4.5
4
3.5
3
2.5
2
1.5
98%
1
typ
0.5
0
-60 -20
20
60 100
12 Typ. gate charge
VGS = f (QGate)
parameter: ID = 6 A pulsed
SPP06N80C3
16
V
°C
180
Tj
12
0,2 VDS max
10
0,8 VDS max
10
8
150°C
8
6
6
4
4
2
2
0
0 2 4 6 8 10 12 14 16 V 20
VGS
0
0 5 10 15 20 25 30 35 40 nC 50
QGate
Rev. 2.6
Page 7
2007-08-30
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