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H11AV1AM Просмотр технического описания (PDF) - Fairchild Semiconductor

Номер в каталоге
Компоненты Описание
производитель
H11AV1AM
Fairchild
Fairchild Semiconductor Fairchild
H11AV1AM Datasheet PDF : 10 Pages
1 2 3 4 5 6 7 8 9 10
Absolute Maximum Ratings (TA = 25°C unless otherwise specified.)
Stresses exceeding the absolute maximum ratings may damage the device. The device may not function or be
operable above the recommended operating conditions and stressing the parts to these levels is not recommended.
In addition, extended exposure to stresses above the recommended operating conditions may affect device reliability.
The absolute maximum ratings are stress ratings only.
Symbol
Parameter
TOTAL DEVICE
TSTG
TOPR
TSOL
PD
Storage Temperature
Operating Temperature
Wave Solder Temperature (see page 8 for reflow solder profiles)
Total Device Power Dissipation @ TA = 25°C
Derate above 25°C
EMITTER
IF
DC / Average Forward Input Current
VR
Reverse Input Voltage
PD
LED Power Dissipation @ TA = 25°C
Derate above 25°C
DETECTOR
VCEO
VCBO
VECO
PD
Collector-Emitter Voltage
Collector-Base Voltage
Emitter-Collector Voltage
Detector Power Dissipation @ TA = 25°C
Derate above 25°C
Value
-40 to +150
-40 to +100
260 for 10 sec
250
2.94
60
6
120
1.41
70
70
7
150
1.76
Units
°C
°C
°C
mW
mW/°C
mA
V
mW
mW/°C
V
V
V
mW
mW/°C
©2005 Fairchild Semiconductor Corporation
H11AV1M, H11AV1AM, H11AV2M, H11AV2AM Rev. 1.0.2
2
www.fairchildsemi.com

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