FQB33N10TM Просмотр технического описания (PDF) - Fairchild Semiconductor
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производитель
FQB33N10TM Datasheet PDF : 8 Pages
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Typical Characteristics
102 Top : 15.V0GVS
10.0 V
8.0 V
7.0 V
6.0 V
5.5 V
5.0 V
Bottom : 4.5 V
101
100
10-1
Notes :
1. 250s Pulse Test
2. TC = 25
100
101
VDS, Drain-Source Voltage [V]
Figure 1. On-Region Characteristics
0.20
0.15
0.10
VGS = 10V
VGS = 20V
0.05
0.00
0
Note : TJ = 25
20
40
60
80
100
120
ID, Drain Current [A]
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
3000
2500
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
2000
1500
Ciss
Coss
Notes :
1. VGS = 0 V
2. f = 1 MHz
1000
Crss
500
0
10-1
100
101
VDS, Drain-Source Voltage [V]
Figure 5. Capacitance Characteristics
102
101
175
25
-55
Notes :
1.
2.
2V5DS0=s40PVulse
Test
100
2
4
8
10
VGS, Gate-Source Voltage [V]
Figure 2. Transfer Characteristics
102
101
100
0.2
175
25
Notes :
1.
2.
2V5GS0=s0VPulse
Test
0.4
0.6
0.8
1.0
1.2
1.4
VSD, Source-Drain voltage [V]
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
12
10
VDS = 50V
VDS = 80V
8
6
4
2
Note : ID = 33A
0
0
5
10
15
20
25
30
35
40
QG, Total Gate Charge [nC]
Figure 6. Gate Charge Characteristics
©2000 Fairchild Semiconductor Corporation
3
FQB33N10 Rev. C1
www.fairchildsemi.com
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