FQB33N10TM Просмотр технического описания (PDF) - Fairchild Semiconductor
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FQB33N10TM Datasheet PDF : 8 Pages
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FQB33N10
N-Channel QFET® MOSFET
100 V, 33 A, 52 mΩ
October 2013
Description
This N-Channel enhancement mode power MOSFET is
produced using Fairchild Semiconductor’s proprietary planar
stripe and DMOS technology. This advanced MOSFET
technology has been especially tailored to reduce on-state
resistance, and to provide superior switching performance
and high avalanche energy strength. These devices are
suitable for switched mode power supplies, audio amplifier,
DC motor control, and variable switching power applications.
Features
• 33 A, 100 V, RDS(on) = 52 mΩ (Max) @VGS = 10 V,
ID = 16.5 A
• Low Gate Charge (Typ. 38 nC)
• Low Crss (Typ. 62 pF)
• 100% Avalanche Tested
• 175°C Maximum Junction Temperature Rating
D
D
G
S
D2-PAK
G
S
Absolute Maximum Ratings TC = 25°C unless otherwise noted
Symbol
Parameter
VDSS
ID
IDM
VGSS
EAS
IAR
EAR
dv/dt
PD
TJ, TSTG
TL
Drain-Source Voltage
Drain Current
- Continuous (TC = 25°C)
- Continuous (TC = 100°C)
Drain Current - Pulsed
(Note 1)
Gate-Source Voltage
Single Pulsed Avalanche Energy
(Note 2)
Avalanche Current
(Note 1)
Repetitive Avalanche Energy
(Note 1)
Peak Diode Recovery dv/dt
(Note 3)
Power Dissipation (TA = 25°C) *
Power Dissipation (TC = 25°C)
- Derate above 25°C
Operating and Storage Temperature Range
Maximum lead temperature for soldering purposes,
1/8 from case for 5 seconds
FQB33N10TM
100
33
23
132
±25
435
33
12.7
6.0
3.75
127
0.85
-55 to +175
300
Thermal Characteristics
Symbol
Parameter
RJC
RJA
Thermal Resistance, Junction to Case, Max.
Thermal Resistance, Junction to Ambient (minimum pad of 2 oz copper), Max.
Thermal Resistance, Junction to Ambient (* 1 in2 pad of 2 oz copper), Max.
FQB33N10TM
1.18
62.5
40
Unit
V
A
A
A
V
mJ
A
mJ
V/ns
W
W
W/°C
°C
°C
Unit
oC/W
©2000 Fairchild Semiconductor Corporation
1
FQB33N10 Rev. C1
www.fairchildsemi.com
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