TGF2022-60 Просмотр технического описания (PDF) - TriQuint Semiconductor

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TGF2022-60

DC - 20 GHz Discrete power pHEMT

TriQuint Semiconductor 

Advance Product Information

September 19, 2005

TABLE I

MAXIMUM RATINGS

TGF2022-60

Symbol

V+

V-

I+

| IG |

PIN

PD

TCH

TM

TSTG

Parameter 1/

Positive Supply Voltage

Negative Supply Voltage Range

Positive Supply Current (Quiescent)

Gate Supply Current

Input Continuous Wave Power

Power Dissipation

Operating Channel Temperature

Mounting Temperature (30 Seconds)

Storage Temperature

Value

12.5 V

-5V to 0V

2820 mA

70 mA

33 dBm

See note 3

150 °C

320 °C

-65 to 150 °C

Notes

2/

2/

2/

2/ 3/

4/

1/ These ratings represent the maximum operable values for this device.

2/ Combinations of supply voltage, supply current, input power, and output power shall

not exceed PD.

3/ For a median life time of 1E+6 hrs, Power dissipation is limited to:

PD(max) = (150 °C – TBASE °C) / 14.2 (°C/W)

4/ Junction operating temperature will directly affect the device median time to failure

(TM). For maximum life, it is recommended that junction temperatures be maintained

at the lowest possible levels.

TABLE II

DC PROBE CHARACTERISTICS

(TA = 25 qC, Nominal)

Symbol

Parameter

Idss Saturated Drain Current

Gm

Transconductance

VP

VBGS

VBGD

Pinch-off Voltage

Breakdown Voltage

Gate-Source

Breakdown Voltage

Gate-Drain

Minimum

-

-

-1.5

-30

-30

Typical

1800

2250

-1

-

-

Maximum Unit

-

mA

-

mS

-0.5

V

-14

V

-14

V

Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown

2

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

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