TGF2022-12 Просмотр технического описания (PDF) - TriQuint Semiconductor

Номер в каталоге

Компоненты Описание

производитель

TGF2022-12

DC - 20 GHz Discrete power pHEMT

TriQuint Semiconductor 

Advance Product Information

September19, 2005

TABLE I

MAXIMUM RATINGS

TGF2022-12

Symbol

Parameter 1/

V+

Positive Supply Voltage

V-

Negative Supply Voltage Range

I+

Positive Supply Current

| IG | Gate Supply Current

PIN Input Continuous Wave Power

PD Power Dissipation

TCH Operating Channel Temperature

TM Mounting Temperature (30 Seconds)

TSTG Storage Temperature

Value

12.5 V

-5V to 0V

564 mA

14 mA

26 dBm

See note 3

150 °C

320 °C

-65 to 150 °C

Notes

2/

2/

2/

2/ 3/

4/

1/ These ratings represent the maximum operable values for this device.

2/ Combinations of supply voltage, supply current, input power, and output power shall

not exceed PD.

3/ For a median life time of 1E+6 hrs, Power dissipation is limited to:

PD(max) = (150 °C – TBASE °C) / 69.0 (°C/W)

4/ Junction operating temperature will directly affect the device median time to failure

(TM). For maximum life, it is recommended that junction temperatures be maintained

at the lowest possible levels.

TABLE II

DC PROBE CHARACTERISTICS

(TA = 25 qC, Nominal)

Symbol

Parameter

Idss Saturated Drain Current

Gm

Transconductance

VP

VBGS

VBGD

Pinch-off Voltage

Breakdown Voltage

Gate-Source

Breakdown Voltage

Gate-Drain

Minimum

-

-

-1.5

-30

-30

Typical

360

450

-1

-

-

Maximum Unit

-

mA

-

mS

-0.5

V

-14

V

-14

V

Note: For TriQuint’s 0.35um power pHEMT devices, RF breakdown >> DC breakdown

2

TriQuint Semiconductor Texas: Phone (972)994-8465 Fax (972)994-8504 Email: Info-mmw@tqs.com Web: www.triquint.com

Share Link: